PZT thin films by multiple target reactive sputtering

Abstract

Lead zirconate titanate thin films have been deposited by reactive sputtering using an independently RF-supplied three-target (Pb, Zr, Ti) system at a substrate temperature of 615[ddot]C. The lead content depended greatly on the input rf power at the Ti target, the highest power among the three targets, indicating resputtering. Remanent polarization (Pr) was 26.6 μC/cm² for a PZT film of 3200 Å thickness. Dependence of etching rate of PZT and Pt on incidence angle of the Ar ion beam in ion milling was investigated to optimize selectivity.

Key Words:

• PZT films
• reactive sputtering
• ion milling