Characterization of Ba_0.5Sr_0.5TiO₃ thin film capacitors produced by pulsed laser deposition

Q. X. Jia Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA

D. S. Zhou Center for Materials Science, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA

X. D. Wu Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA

S. R. Foltyn Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA

P. Tiwari Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA

T. E. Mitchell Center for Materials Science, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA

Abstract

High crystallinity Ba_0.5Sr_0.5TiO₃ thin films were deposited on LaAlO₃ substrates by pulsed laser deposition. A conductive metallic oxide, SrRuO₃, provided not only a good bottom electrode for Ba_0.5Sr_0.5TiO₃ but also an excellent seed layer for epitaxial growth of Ba_0.5Sr_0.5TiO₃ on it. The epitaxial nature of the Ba_0.5Sr_0.5TiO₃ thin films on the LaAlO₃ substrate was confirmed by x-ray diffraction, Rutherford backscattering spectroscopy, and cross-sectional transmission electron microscopy. The quite good dielectric and electrical properties of crystalline Ba_0.5Sr_0.5TiO₃ thin films suggest that Ba_0.5Sr_0.5TiO₃/SrRuO₃ is a good combination in terms of structural, electrical, and dielectric properties of Ba_0.5Sr_0.5TiO₃ thin films.

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Characterization of Ba_0.5Sr_0.5TiO₃ thin film capacitors produced by pulsed laser deposition

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Characterization of Ba_0.5Sr_0.5TiO₃ thin film capacitors produced by pulsed laser deposition