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Integrated Ferroelectrics
An International Journal
Volume 10, 1995 - Issue 1-4
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Characterization and testing

Transient current during switching in increasing electric field as a basis for a new testing method

V. Y.A. Shur Institute of Physics and Applied Mathematics, Ural State University, Lenin Ave. 51, 620083, Ekaterinburg, Russia
,
E. L. Rumyantsev Institute of Physics and Applied Mathematics, Ural State University, Lenin Ave. 51, 620083, Ekaterinburg, Russia
,
S. D. Makarov Institute of Physics and Applied Mathematics, Ural State University, Lenin Ave. 51, 620083, Ekaterinburg, Russia
,
A. L. Subbotin Institute of Physics and Applied Mathematics, Ural State University, Lenin Ave. 51, 620083, Ekaterinburg, Russia
&
V. V. Volegov Institute of Physics and Applied Mathematics, Ural State University, Lenin Ave. 51, 620083, Ekaterinburg, Russia
Pages 223-230 | Received 22 Mar 1995, Published online: 19 Aug 2006
 
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Abstract

The paper presents the new method of detail analyzing of transient current data in linear increasing electric field, which allows to obtain the time dependence of main parameters characterizing the domain kinetics. The switching process in PZT thin films, so as in Pb5Ge3O11 model single crystal was investigated.

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Related Research Data

Ultrafast polarization switching in thin-film ferroelectrics
Source: AIP Publishing

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