Dielectric relaxation of perovskite—type oxide thin films

Abstract

The dielectric relaxation is primary important for determining the applicability of oxide thin films in integrated devices which operate at high frequencies, such as DRAMs, FERAMs and microwave circuit capacitors.

An impedance analysis based on fast—transient measuring techniques in comparison to a real DRAM operation test and measurements in the frequency domain will be used to discuss the potential mechanisms for the relaxation. The impact of the thin film material, processing parameters, temperature, and field on the dielectric relaxation will give some possible ideas about the nature of the relaxation process. Simulation algorithms have been developed in order to mutually calculate the dielectric responses to various types of stimulation in the time and frequency domain.