Electrical characteristics of MOCVD deposited Ba_1−xSr_xTiO₃/ YBa₂Cu₃O_7-x ON LaAlO₃ substrate

T. S. Kalkur Microelectronics Research Laboratories Department of Electrical and Computer Engineering University of Colorado at, Colorado Springs, CO, 80933–7150

S. Liang Microelectronics Research Laboratories Department of Electrical and Computer Engineering University of Colorado at, Colorado Springs, CO, 80933–7150; Department of Electrical and Computer Engineering Rutgers University, Piscataway, New Jersey, NJ, 0855–0909

Y. Lu Microelectronics Research Laboratories Department of Electrical and Computer Engineering University of Colorado at, Colorado Springs, CO, 80933–7150; Department of Electrical and Computer Engineering Rutgers University, Piscataway, New Jersey, NJ, 0855–0909

C. S. Chern EMCORE Corporation, New Jersey, NJ, 08873

Abstract

High dielectric constant material Ba_0·6Sr_0·4TiO₃ (BST) was heteroepitaxially grown over YBa₂Cu₃O_7-x (YBCO) on Lanthanum aluminate (LaAlO₃) substrates. The electrical characteristics of the BST film was studied by depositing electron beam evaporated platinum (Pt). The capacitancevoltage (C-V) measurements at various temperatures up to 100°C show negative temperature coefficient for capacitance, confirming the paraelectric phase. The capacitance vs voltage and current vs voltage characteristics show asymmetry with the polarity of the applied voltage. The asymmetry in the capacitance and current-voltage characteristics can be explained by defect chemistry model of electrode/oxide interface.

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Electrical characteristics of MOCVD deposited Ba_1−xSr_xTiO₃/ YBa₂Cu₃O_7-x ON LaAlO₃ substrate

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Electrical characteristics of MOCVD deposited Ba1−xSrxTiO3/ YBa2Cu3O7-x ON LaAlO3 substrate

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Electrical characteristics of MOCVD deposited Ba_1−xSr_xTiO₃/ YBa₂Cu₃O_7-x ON LaAlO₃ substrate