Characterization of an N-channel 1T-1C nonvolatile memory cell using ferroelectric SrBi₂Ta₂O₉ as the capacitor dielectric

Abstract

This work investigates the feasibility of a 1T-1C memory cell consisting of an n-channel transistor and ferroelectric SrBi₂Ta₂O₉ as the capacitor dielectric. 1T-1C ferroelectric memory cells processed through interconnect metalization are discussed. Advantages and disadvantages of two different process sequences are examined. Data indicates that n-channel transistor damage is highly dependent on the process sequence, and that a SrBi₂Ta₂O₉ 1T-1C memory cell is fully functional through interconnect metalization.