Preparation of PZT thin films by MOCVD using a new Pb precursor

Abstract

Using (C₂H₅)₃PbOCH₂C(CH₃)₃ (triethyl n-pentoxy lead : TEPOL) as a new Pb precursor, PbO, PbTiO₃ and PZT thin films were successfully grown by MOCVD. The main reaction for the growth of the PbO thin films was oxidation of TEPOL. PbTiO₃ thin films, whose dielectric constants ranged from 50 to 200, were grown at substrate temperatures higher than 525°C. Tetragonal and rhombohedral PZT thin films were successfully obtained at substrate temperatures higher than 470°C and 500°C, respectively - these temperatures being 50°C and 40°C lower than when Pb(C₂H₅)₄ was used as a Pb precursor. The PZT films obtained showed good dielectric and ferroelectric properties, and showed dielectric constants between 190 and 1000, remanent polarizations of 15–20 μC/cm² and coercive fields of 70–90 kV/cm. The toxicity of TEPOL was also discussed.