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Abstract
PZT capacitor with direct contact between Si substrate and bottom electrode of the capacitor was obtained with Ir/IrO2/Ir/Ti electrode, by crystallizing sol-gel PZT thin film using RTA (650°CC 30 sec.). Contact resistance for hole diameter of 0.72 μm was 19 Ω. It was observed by cross-sectional TEM that Ti silicide was formed at the interface, but there was not oxygen diffusion from PZT thin film. Fatigue property of the PZT thin film was improved by RTA compared with furnace annealed film (600°CC 60 min.). The absolute value of the remnant polarization was 13 μC/cm2 for both films, but it did not degrade until 108 cycles of switching for the film by RTA, while it degraded before 105 cycles for furnace annealed film.