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Non-volatile memories and materials

Non-volatile memories using SrBi₂Ta₂O₉ ferroelectrics

R. E. Jones Jr. Motorola, Materials Research and Strategic Technologies, 3501 Ed Bluestein Blvd., MD-K10, Austin, Texas, 78721, U.S.A.

P. Y. Chu Motorola, Materials Research and Strategic Technologies, 3501 Ed Bluestein Blvd., MD-K10, Austin, Texas, 78721, U.S.A.

B. Jiang Motorola, Materials Research and Strategic Technologies, 3501 Ed Bluestein Blvd., MD-K10, Austin, Texas, 78721, U.S.A.

B. M. Melnick Motorola, Materials Research and Strategic Technologies, 3501 Ed Bluestein Blvd., MD-K10, Austin, Texas, 78721, U.S.A.

D. J. Taylor Motorola, Materials Research and Strategic Technologies, 3501 Ed Bluestein Blvd., MD-K10, Austin, Texas, 78721, U.S.A.

B. E. White Jr. Motorola, Materials Research and Strategic Technologies, 3501 Ed Bluestein Blvd., MD-K10, Austin, Texas, 78721, U.S.A.

S. Zafar Motorola, Materials Research and Strategic Technologies, 3501 Ed Bluestein Blvd., MD-K10, Austin, Texas, 78721, U.S.A.

D. Price Motorola, Advanced Design Technology, Tempe, AZ, 85284, U.S.A.

P. Zurcher Motorola, Materials Research and Strategic Technologies, 3501 Ed Bluestein Blvd., MD-K10, Austin, Texas, 78721, U.S.A.

S. J. Gillespie Motorola, Materials Research and Strategic Technologies, 3501 Ed Bluestein Blvd., MD-K10, Austin, Texas, 78721, U.S.A.

T. Otsuki Matsushita Electronics Corp, Electronics Research Laboratory, Takatsuki, Japan

T. Sumi Matsushita Electronics Corp., Kyoto Research Laboratory, Kyoto, Japan

Y. Judai Matsushita Electronics Corp, Electronics Research Laboratory, Takatsuki, Japan

Y. Uemoto Matsushita Electronics Corp, Electronics Research Laboratory, Takatsuki, Japan

E. Fujii Matsushita Electronics Corp, Electronics Research Laboratory, Takatsuki, Japan

S. Hayashi Matsushita Electronics Corp, Electronics Research Laboratory, Takatsuki, Japan

N. Moriwaki Matsushita Electronics Corp., Kyoto Research Laboratory, Kyoto, Japan

M. Azuma Matsushita Electronics Corp, Electronics Research Laboratory, Takatsuki, Japan

Y. Shimada Matsushita Electronics Corp, Electronics Research Laboratory, Takatsuki, Japan

K. Arita Matsushita Electronics Corp, Electronics Research Laboratory, Takatsuki, Japan

H. Hirano Matsushita Electronics Corp., Kyoto Research Laboratory, Kyoto, Japan

J. Nakane Matsushita Electronics Corp., Kyoto Research Laboratory, Kyoto, Japan

T. Nakakum Matsushita Electronics Corp., Kyoto Research Laboratory, Kyoto, Japan

G. Kano Matsushita Electronics Corp, Electronics Research Laboratory, Takatsuki, Japan

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Abstract

Ferroelectric non-volatile memories (FENVM) are fabricated using spin-coat and fire deposition of the SrBi₂Ta₂O₉ layered perovskite ferroelectric. Test memories using a 2 transistor-2 capacitor bit cell, top contacts to capacitors and single level metal were fabricated. We report here on the integration and electrical characteristics of fully functional 1 Kbit test memories.

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Non-volatile memories using SrBi₂Ta₂O₉ ferroelectrics

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Non-volatile memories using SrBi₂Ta₂O₉ ferroelectrics