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Integrated Ferroelectrics
An International Journal
Volume 17, 1997 - Issue 1-4
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Non-volatile memories and materials

Temperature dependence of ferroelectric properties of SrBi2Ta2O9 thin films

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Pages 57-65 | Published online: 19 Aug 2006
 

Abstract

Temperature dependence of ferroelectric properties was studied on SrBi2Ta2O9 thin films with stoichiometric composition and Sr deficient and/or Bi excess compositions. Decreasing rate of remanent polarization Pr with increasing temperature was fairly small for the 20% Sr deficient compositions compared to the stoichiometric Sr content compositions. The large Pr decrease for the stoichiometric compositions was attributed to the increase of fast polarization relaxation with increasing temperature. Fatigue-free property was confirmed even at 150 °C for all compositions.

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