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Abstract
Pyroelectric IR imaging, especially based on monolithic technology integrated with semiconductors, is receiving increased attention for the next generation of room temperature uncooled IR cameras. In the present work, sol-gel derived PZT, including PbTiO3, PLT 28, PLZT 9/65/35, and PZT 53/47, films were prepared on platinized Si substrates. Their pyroelectric properties were determined, and are discussed with respect to film microstructures, processing, and chemistries. Pyroelectric coefficients as large as 7.7×10−8 C/cm2-K, were obtained for PZT 53/47 films.