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Integrated Ferroelectrics
An International Journal
Volume 17, 1997 - Issue 1-4
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Device integration

Development of a new annealing process to allow new top electrode materials for SrBi2Ta2O9 capacitors

Koji Watanabe Yagi Microdevices Laboratory Research Center Sony Corporation Atsugi Technology Center, 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa-ken, 243, Japan
,
Masahiro Tanaka Yagi Microdevices Laboratory Research Center Sony Corporation Atsugi Technology Center, 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa-ken, 243, Japan
,
Nicolas Nagel Yagi Microdevices Laboratory Research Center Sony Corporation Atsugi Technology Center, 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa-ken, 243, Japan
,
Kenji Katori Yagi Microdevices Laboratory Research Center Sony Corporation Atsugi Technology Center, 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa-ken, 243, Japan
,
Masataka Sugiyama Yagi Microdevices Laboratory Research Center Sony Corporation Atsugi Technology Center, 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa-ken, 243, Japan
,
Hisayoshi Yamoto Yagi Microdevices Laboratory Research Center Sony Corporation Atsugi Technology Center, 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa-ken, 243, Japan
&
Hajime Yagi Yagi Microdevices Laboratory Research Center Sony Corporation Atsugi Technology Center, 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa-ken, 243, Japan
 show all
Pages 451-460 | Published online: 19 Aug 2006
 
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Abstract

Using the Rapid Thermal Annealing (RTA) process, a technique has been established to obtain SrBi2Ta2O9 (SBT) films which showed well-shaped hysteresis curves without a postannealing process after top electrode deposition, maintaining high remanent polarization (Pr) values. RTA conditions were optimized for nucleation of SBT. The effect of a seed layer on the film properties became obvious. This process allowed top electrode materials other than Pt. High remanent polarization (Pr) values could be also obtained with Pd top electrodes.

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