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Integrated Ferroelectrics
An International Journal
Volume 16, 1997 - Issue 1-4
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Device intergration issues and testing

Process and properties of Pt/Pb(Zr, Ti)O3/Pt integrated ferroelectric capacitors

K. Torii Central Research Laboratory Hitachi, Ltd., 1-280 Higashi-koigakubo Kokubunji, Tokyo, 185, Japan
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H. Kawakami Central Research Laboratory Hitachi, Ltd., 1-280 Higashi-koigakubo Kokubunji, Tokyo, 185, Japan; Semiconductor Development Center, Hitachi, Ltd., 1-280 Higashi-koigakubo Kokubunji, Tokyo, 185, Japan
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H. Miki Central Research Laboratory Hitachi, Ltd., 1-280 Higashi-koigakubo Kokubunji, Tokyo, 185, Japan
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K. Kushida Central Research Laboratory Hitachi, Ltd., 1-280 Higashi-koigakubo Kokubunji, Tokyo, 185, Japan
,
T. Itoga Central Research Laboratory Hitachi, Ltd., 1-280 Higashi-koigakubo Kokubunji, Tokyo, 185, Japan
,
Y. Goto Central Research Laboratory Hitachi, Ltd., 1-280 Higashi-koigakubo Kokubunji, Tokyo, 185, Japan
,
T. Kumihashi Central Research Laboratory Hitachi, Ltd., 1-280 Higashi-koigakubo Kokubunji, Tokyo, 185, Japan
,
N. Yokoyama Central Research Laboratory Hitachi, Ltd., 1-280 Higashi-koigakubo Kokubunji, Tokyo, 185, Japan
,
M. Moniwa Central Research Laboratory Hitachi, Ltd., 1-280 Higashi-koigakubo Kokubunji, Tokyo, 185, Japan
,
K. Shoji Central Research Laboratory Hitachi, Ltd., 1-280 Higashi-koigakubo Kokubunji, Tokyo, 185, Japan
,
T. Kaga Central Research Laboratory Hitachi, Ltd., 1-280 Higashi-koigakubo Kokubunji, Tokyo, 185, Japan
&
Y. Fujisaki Central Research Laboratory Hitachi, Ltd., 1-280 Higashi-koigakubo Kokubunji, Tokyo, 185, Japan
 show all
Pages 21-28 | Received 18 Mar 1996, Published online: 19 Aug 2006
 
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Abstract

A one-mask-patterned ferroelectric capacitor memory cell structures designed with a 0.5-μm feature size were fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as as-deposited film. The one-mask-patterned ferroelectric capacitors with switching charge almost equal to as-deposited film were achieved. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology.

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