Integration of ferroelectric capacitors using multilayered electrode

Abstract

The ferroelectric capacitors of PZT are fabricated using RuO₂/Pt electrode to examine the electrode effect on ferroelectric properties. PZT films are prepared by metalo-organic decomposition(MOD) on sputter deposited electrodes. In particular, inductively coupled plasma(ICP) etcher is used to reduce the etching damage. In addition, TiO₂ reaction barrier layer is employed to retard the degradation of ferroelectric properties due to the reaction between a passivation layer and PZT film. The electrical properties of Pt/RuO₂/PZT/RuO₂/Pt capacitors are compared to those obtained from Pt/PZT/Pt and RuO₂/PZT/RuO₂ capacitors. The better ferroelectric properties is likely attributed to the modification in the microstructure of PZT film. The result implicates RuO₂/Pt would be a good electrode for a nonvolatile memory application.