Electrical characterization of SrBi₂Ta₂O₉ capacitors for non-volatile memory operation

Abstract

Pulse response of SrBi₂Ta₂O₉ capacitors was measured for large-scale non-volatile memory design. Pulse response depended on capacitor size, while such a dependence was not observed in hysteresis measurement. As the reference capacitor in the Sawyer-Tower circuit decrease, the signal voltage greatly increased. This result suggests small bit-line capacitor is preferable for memory design. The possibility of very low-voltage operation was indicated.