Stability of reactive DC-sputtered Ir and IrO₂ thin films in various ambients

Tung-Sheng Chen Microelectronics Research Center, Mail Code R9950 University of Texas at Austin, TX 78712

Venkatasubramani Balu Microelectronics Research Center, Mail Code R9950 University of Texas at Austin, TX 78712

Bo Jiang Microelectronics Research Center, Mail Code R9950 University of Texas at Austin, TX 78712

Shao-Hong Kuah Microelectronics Research Center, Mail Code R9950 University of Texas at Austin, TX 78712

Jack C. Lee Microelectronics Research Center, Mail Code R9950 University of Texas at Austin, TX 78712

Peir Chu Advanced Materials, Materials Research and Strategic Technologies, Motorola, Inc., MD K1, 3501 Ed Bluestein Blvd., Austin, Texas, 78721, U.S.A

Robert E. Jones Advanced Materials, Materials Research and Strategic Technologies, Motorola, Inc., MD K1, 3501 Ed Bluestein Blvd., Austin, Texas, 78721, U.S.A

Peter Zurcher Advanced Materials, Materials Research and Strategic Technologies, Motorola, Inc., MD K1, 3501 Ed Bluestein Blvd., Austin, Texas, 78721, U.S.A

Deborah J. Taylor Advanced Materials, Materials Research and Strategic Technologies, Motorola, Inc., MD K1, 3501 Ed Bluestein Blvd., Austin, Texas, 78721, U.S.A

Sherry Gillespie Advanced Materials, Materials Research and Strategic Technologies, Motorola, Inc., MD K1, 3501 Ed Bluestein Blvd., Austin, Texas, 78721, U.S.A

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Abstract

Ir and IrO₂ are potential electrode materials for ferroelectric thin film capacitors. However, some process related issues need to be considered before integrating ferroelectric capacitors into memory cells. This paper presents the effects of post-deposition annealing on the characteristics of DC-magnetron sputtered Ir and IrO₂ thin films. Film properties such as composition, resistivity, crystallinity, adhesion, and microstructure were examined before and after annealing.

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Stability of reactive DC-sputtered Ir and IrO₂ thin films in various ambients

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Stability of reactive DC-sputtered Ir and IrO₂ thin films in various ambients