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Integrated Ferroelectrics
An International Journal
Volume 16, 1997 - Issue 1-4
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Memory devices and charecterization

Modeling ferroelectric capacitor switching using a parallel-elements model

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Pages 199-208 | Received 18 Mar 1996, Published online: 19 Aug 2006
 

Abstract

The charge-voltage (Q-V) relationship of ferroelectric capacitors experiencing arbitrary applied voltages is investigated both theoretically and experimentally. The complex behavior and history dependence of a ferroelectric capacitor in response to arbitrary voltage patterns can be well described by a parallel-elements model. This approach not only describes all of the major properties of ferroelectric hysteresis but is also very easy to implement into existing circuit design/simulation tools.

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