Publication Cover
Integrated Ferroelectrics
An International Journal
Volume 16, 1997 - Issue 1-4
19
Views
6
CrossRef citations to date
0
Altmetric
Memory devices and charecterization

The use of voltage to accelerate the endurance degradation of PZT capacitors

, &
Pages 219-227 | Received 18 Mar 1996, Published online: 19 Aug 2006
 

Abstract

A voltage vs. endurance model was created to predict the performance of PZT from 3 to 8 volts. Capacitors that are part of the street structure on finished wafer products were cycled from 10 to a total of le 12 cycles. The switched charge was measured over 10 to 12 orders of magnitude in order to develop models to predict performance out to 1e15 cycles. The switched charge was found to degrade as a square function of the log of the number of cycles fatigued. The model was found to fit the data with an r2 greater than .95. Utilizing the minimum allowable charge for a sense amplifier, this model could be used to predict part life over operating voltages.

Reprints and Corporate Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

To request a reprint or corporate permissions for this article, please click on the relevant link below:

Academic Permissions

Please note: Selecting permissions does not provide access to the full text of the article, please see our help page How do I view content?

Obtain permissions instantly via Rightslink by clicking on the button below:

If you are unable to obtain permissions via Rightslink, please complete and submit this Permissions form. For more information, please visit our Permissions help page.