Abstract
By a simulated annealing Monte Carlo (MC) method the relative dielectric permittivity as a function of applied external electric field is determined for the cubic perovskite structure NaCaF3 at 475K and 300K. In this work, particular attention is focused on designing ionics with exceptionally high zero-field dielectric constants for maximizing storage capacity in ferroelectric memories. Dielectric permittivity vs. applied electric field data are in qualitative agreement with those obtained experimentally for a ferroelectric Schottky diode.