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Integrated Ferroelectrics
An International Journal
Volume 14, 1997 - Issue 1-4
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Materials processing - CVD

Chemical vapor deposition of (Ba,Sr)TiO3 thin films for application in gigabit scale dynamic random access memories

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Pages 33-42 | Received 18 Mar 1996, Published online: 19 Aug 2006
 

Abstract

Our recent study respecting chemical vapor deposition of (Ba, Sr)TiO3 thin films was discussed focusing on conformal deposition technique and composition control. Perfect conformal (Ba, Sr)TiO3 films were deposited under the kinetically limited condition using Ba(THD)2-Sr(THD)2-TiO(THD)2 (THD is 2,2,6,6-tetramethyl-3,5-heptanedione) source system. We successfully fabricated three-dimensional capacitors using this conformal deposition technique. Under the kinetically limited condition, the Ba/Sr composition ratio was determined by the partial pressure ratio of Ba(THD)2 and Sr(THD)2. The self-matching of Ti/(Ba+Sr) stoichiometry occurred under a certain TiO(THD)2 supply range. It was proposed that the possible important reactant species were (THD)2Ba-O-Ti(THD)2 and (THD)2Sr-O-Ti(THD)2 dimers.

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