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Abstract
SrTiO3 thin films were deposited on Pt/SiO2/Si and RuO2/SiO2/Si substrates by low-pressure metalorganic chemical vapor deposition(MOCVD) using Sr(DPM)2 and Ti(i-O3H7)4. The effects of deposition parameters on the growth behavior such as composition, crystallization and microstructure were investigated. With increasing the Sr(DPM)2 bubbler temperature from 205°C to 220°C, the cation concentration ratio of Sr/Ti increased from 0.8 to 2.3 and microstructure changed from round grains to hemispherical ones. The dielectric constant and dielectric loss of 50 nm thick SrTiO3 films deposited at 550°C were 146 and 0.02–0.04, respectively. The leakage current density was 3.7 × 10−7 A/cm2 at 1V.