Structural characterization of Ba_0.5Sr_0.5,TiO₃ on RuO₂ prepared by pulsed laser deposition

Q. X. Jia Materials Science and Technology Division, Los Alamos National Laboratory, Mail Stop G755, Los Alamos, NM, 87545, USA

A. T. Findikoglu Materials Science and Technology Division, Los Alamos National Laboratory, Mail Stop G755, Los Alamos, NM, 87545, USA

R. Zhou Materials Science and Technology Division, Los Alamos National Laboratory, Mail Stop G755, Los Alamos, NM, 87545, USA

S. R. Foltyn Materials Science and Technology Division, Los Alamos National Laboratory, Mail Stop G755, Los Alamos, NM, 87545, USA

X. D. Wu Materials Science and Technology Division, Los Alamos National Laboratory, Mail Stop G755, Los Alamos, NM, 87545, USA

Abstract

Highly conductive RuO₂ thin films were epitaxially grown on (100) LaAlO₃ substrates by pulsed laser deposition. The RuO₂ film deposited with optimized conditions was (h00) oriented normal to the substrate surface with strong in-plane orientation. The RuO₂ thin films deposited at temperatures of above 500 °C demonstrated a room-temperature resistivity of 35 ± 2 μΩ-cm. The Ba_0.5Sr_0.5TiO₃ thin films deposited on epi-RuO₂ showed pure (111) orientation normal to the substrate surface, and exhibited dielectric constant above 600 and dielectric loss of 0.03–0.05 at 100 kHz under zero dc bias.

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Structural characterization of Ba_0.5Sr_0.5,TiO₃ on RuO₂ prepared by pulsed laser deposition

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Structural characterization of Ba0.5Sr0.5,TiO3 on RuO2 prepared by pulsed laser deposition

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Structural characterization of Ba_0.5Sr_0.5,TiO₃ on RuO₂ prepared by pulsed laser deposition