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Integrated Ferroelectrics
An International Journal
Volume 14, 1997 - Issue 1-4
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Materials processing - PVD

Effect of SrTiO3 deposition temperature on the dielectric properties of SrTiO3/YBa2Cu3O7-δ/LaAlO3 structures

, , , , , , & show all
Pages 173-180 | Received 18 Mar 1996, Published online: 19 Aug 2006
 

Abstract

We report on the effect of the deposition temperature of SrTiO3 on the dielectric properties of SrTiO3/YBa2Cu3O7-δ/LaAlO3 thin film multilayer structures. In these structures, the YBa2Cu3O7-δ (YBCO) films were deposited at 800°C by laser ablation, followed by the in-situ deposition of the SrTiO3 (STO) layer at one of the following temperatures: 750°C, 650°C, 550°C, 450°C, 350°C, and 250°C. Gold (Au) films were deposited and patterned on top of the STO layer to form planar Au/STO/YBCO capacitor structures. The electrical response was studied by measuring the dielectric constant (εr) and loss tangent (tanδ) of the ferroelectric film from 300–40 K, at 1.0 MHz, and at electric fields up to 100 kV/cm. Our results show 750°C to be a deposition temperature which allows for large variations of εr with applied field, and with limited enhancement of tanδ. Lower deposition temperatures cause a reduction of the induced change in εr and an increase in tanδ with applied field.

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