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Abstract
Electrical characteristics of Pt-BST-ZrO2-p-Si metal-ferroelectric-insulator-p Si (MFIS) structures have been investigated. The BST film was deposited by sol gel technique and annealed in oxygen environment for about an hour at 800°C. The capacitance-voltage characteristics of these structures show hysteresis and the direction of hysteresis corresponds to ferroelectric polarization. The hysteresis in the C-V characteristics were found to be dependent on the thickness of the buffer layer as well as on the duration of the applied voltage. A model based on the polarization of the ferroelectric film and charge injection at the silicon - insulator interface was proposed to explain the electrical characteristics.