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Abstract
An MOCVD technique has been developed for (Ba,Sr)TiO3 (BST) films based on flash vaporization of metalorganic precursors with exceptional composition control and no process drift for the equivalent of ∼1300 wafers of 30 nm thickness. Charge storage density of > 60 fF/μm2 has been routinely obtained for 30 nm films and values up to 100 fF/μm2 have been observed for films with electrical leakage < 10−7 A/cm2. The method has also been applied to other materials systems, including Pb(Zr,Ti)O3 (PZT). High quality, single phase PZT films have been deposited and the effect of Zr/Ti ratio has been examined. Remanent polarization (Pr) and coercive field follow expected trends. Pr of ∼ 20 μC/cm2 was observed with fully saturated hysteresis at 3V for films with 140–175 nm thickness. Coercive voltages < 1 V have also been obtained. This finding demonstrates promise of this deposition method for low voltage applications.
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