Measurements of vapor pressures of MOCVD materials, which are usable for ferroelectric thin films

Abstract

Measurements of vapor pressures for various chemicals, which might be used for MOCVD technique to form ferroelectrics on silicon devices, have been carried out under low pressure ambients with argon gas as carrier, so that the measuring conditions resembled the actual cases. Some of the chemicals have been synthesized and refined under high vacuum conditions to guarantee their organic purity. As an example of our MOCVD, use of bismuth tertiary butoxide and strontium bis (hexaisopro-poxytantalum) to form SBT (strontium bismuth tantalate) thin film on a silicon wafer has been introduced.