Abstract
Lead zirconium titanate (PZT) powders and thin film capacitors were prepared using a diol-based chemical solution deposition method with thicker dielectric coating capability. The completed crystallization into the perovskite phase was determined at processing temperatures between 600∼700°C. Improved film coating thickness, uniformity and conformal coating ability were reported for the integration of thin film capacitors on patterned platinized silicon with a dielectric constant of 970 at 1 MHz and 920 at 200 MHz. Results were also reported for thermal analysis, X-ray diffraction, scanning electron microscopy, and reliability test.
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