Electrical properties of SrBi₂Ta₂O₉ thin films deposited by RF magnetron sputtering

Cheol-Hoon Yang Dept. of Materials Engineering, Chungnam National University, Daeduk Science Town, Taejon, 305-764, Korea

Sang-Shik Park Dept. of Materials Engineering, Chungnam National University, Daeduk Science Town, Taejon, 305-764, Korea

Soon-Gil Yoon Dept. of Materials Engineering, Chungnam National University, Daeduk Science Town, Taejon, 305-764, Korea

Abstract

Ferroelectric bismuth layer oxide SrBi₂Ta₂O₉(SBT) thin films were deposited on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering at 500°C and then, were annealed at 850°C for 1 hr in oxygen ambient. The remanent polarization(2P_r) and the coercive field(2E_c) of a 300nm thick SBT film deposited in 10mtorr were 18.5 μC/cm² and 150kV/cm at an applied voltage of 5V, respectively. The SBT films showed a fatigue-free characteristics up to 10¹⁰ cycles under 5V bipolar pulse. The leakage current density of the SBT films were about 8.6 × 10⁻⁸ A/cm² at 100kV/cm.

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Electrical properties of SrBi₂Ta₂O₉ thin films deposited by RF magnetron sputtering

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Electrical properties of SrBi₂Ta₂O₉ thin films deposited by RF magnetron sputtering