Growth and electrical properties of (211) BaTiO₃ thin films on Pt-coated Si(100) substrates

Qingxin Su Department of Chemical Engineering, Rice University, 6100 Main Street, Houston, Texas, TX, 77005, USA

Thomas A. Rabson Rice Quantum Institute, Rice University, 6100 Main Street, Houston, Texas, TX, 77005, USA; Department of Electrical and Computer Engineering, Rice University, 6100 Main Street, Houston, Texas, TX, 77005, USA

Marc Robert Rice Quantum Institute, Rice University, 6100 Main Street, Houston, Texas, TX, 77005, USA; Department of Chemical Engineering, Rice University, 6100 Main Street, Houston, Texas, TX, 77005, USA

Abstract

Barium titanate (BaTiO₃) thin films with high (211) orientation have been prepared on Pt(111)/Si(100) substrates by R. F. magnetron sputtering at a substrate temperature between 550°C and 580°C in an Ar/O₂ atmosphere. The I-V curve of a thin film capacitor (Ag-BaTiO_3-Pt) has been measured and the C-V curves are obtained for frequencies between 100Hz and 1MHz. Neither the I-V curve nor the C-V curves are symmetrical and a very large change in the slope of all curves is found to occur at ∼+0.5v.

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Growth and electrical properties of (211) BaTiO₃ thin films on Pt-coated Si(100) substrates

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Growth and electrical properties of (211) BaTiO3 thin films on Pt-coated Si(100) substrates

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Growth and electrical properties of (211) BaTiO₃ thin films on Pt-coated Si(100) substrates