Electrical properties of PZT thin films grown on Ir/IrO₂ bottom electrodes by MOCVD

Hironori Fujisawa Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo, 671-2201, Japan

Satoshi Hyodo Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo, 671-2201, Japan

Kazuto Jitsui Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo, 671-2201, Japan

Masaru Shimizu Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo, 671-2201, Japan

Hirohiko Niu Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo, 671-2201, Japan

Hirotake Okino Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto, 606-8317, Japan

Tadashi Shiosaki Department of Electronic Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto, 606-8317, Japan

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Abstract

Electrical properties of Ir/IrO₂/PZT/Ir/IrO₂ and IrO₂/Ir/PZT/Ir/IrO₂ capacitors were investigated. SIMS analysis showed that the Ir/IrO₂ bottom electrode acted as a good barrier layer of the interdiffusion. Ir/IrO₂/PZT/Ir/IrO₂ capacitors did not show good electrical properties due to plasma damage during top electrode sputtering. On the other hand, IrO₂/Ir/PZT/Ir/IrO₂ capacitors showed no fatigue up to 10⁹ cycles, when annealing after top electrode deposition was performed. Electrical properties of IrO₂/Ir/PZT/Ir/IrO₂ capacitors were dependent on the thickness of Ir/IrO₂ bottom electrode. These experimental results suggested that electrical properties of PZT capacitors were influenced by the interdiffusion at the bottom interface and the plasma damage at the upper interface.

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Electrical properties of PZT thin films grown on Ir/IrO₂ bottom electrodes by MOCVD

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Electrical properties of PZT thin films grown on Ir/IrO₂ bottom electrodes by MOCVD