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Abstract
Current-voltage characteristics and time-dependent leakage current behavior of (Ba, Sr)TiO3 (BST) thin films deposited by rf magnetron sputtering have been studied in order to identify the effects of bottom electrodes on leakage properties of BST capacitors. RuO2, Pt and Pt/RuO2 hybrid bottom electrodes were prepared by dc magnetron sputtering and thermal MOCVD. From comparison of time-dependent electrical properties of the films deposited on the various bottom electrodes, the material of bottom electrode is responsible for the observed dielectric relaxation phenomenon, regardless of leakage current level and conduction type of the BST capacitors.