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Abstract
Modification of ferroelectricity in heteroepitaxial Ba x Sr1-x TiO3(BST) films by making use of lattice misfit was investigated. Theoretical calculation suggested that application of two-dimensional compressive stress of 3 GPa to the ferroelectric crystal would result in Curie temperature increase by 270°C. This theoretical prediction was experimentally confirmed. Heteroepitaxial Ba0.6Sr0.4TiO3 films grown on SrRuO3/SrTiO3 substrates exhibited ferroelectric hysteresis at 200°C, even though the inherent Curie temperature is known to be 0°C. The possibility of heteroepitaxial BST films for ferroelectric non-volatile memory applications and their advantages were pointed out.