![Sample our Physical Sciences journals, sign in here to start your FREE access for 14 days]({"type":"image" , "src" : "/sda/110819/TOC-Subject-Sample-2021-Physical-Sciences.jpg"})
Abstract
RF magnetron sputtered Pb(Zrx, Ti1-x)O3 [PZT] films were prepared on IrO2/SiO2/Si and Pt/IrO2/SiO2/Si substrates using the ceramic PZT target with Pb1.1(Zr0.52Ti0.48)O3 composition. In order to obtain single perovskite phase, PZT film was sputtered at room temperature under Ar plasma and followed by high temperature annealing under oxygen atmosphere. In case of Pt/PZT/IrO2 capacitor, Δ P (=P*-P∧) was decreased with oxygen annealing temperature. However, it was increased in Pt/PZT/Pt/IrO2 capacitor. Leakage current density of Pt/PZT/Pt/IrO2 capacitor, which was used for improving leakage characteristics, was about 10-2A/cm−2 order lower than that of Pt/PZT/IrO2 capacitor. Leakage current density of Pt/PZT/Pt/IrO2 capacitor annealed at 700°C was 6.6x10-6A/cm2. From the fatigue test, Pt/PZT/IrO2 capacitor annealed at 650°C and Pt/PZT/Pt/IrO2 capacitor annealed at 700°C showed 3% and 12% degradation of Δ P after 5×1010 fatigue cycles, respectively.