Chemical routes for low-temperature processing of layer-structured perovskite thin films

Abstract

A complex alkoxide, Sr[BiTa(OC₂H₅)₉]₂, was prepared as the precursor for SrBi₂Ta₂O₉ (SBT) thin films. The film deposited by using the ethanolic solution of the precursor crystallized to SBT below 500°C by rapid thermal annealing in an oxygen flow. The calcination at 250°C in a mixture of water vapor and oxygen following the rapid thermal annealing was found to be effective for improvement of the crystallinity and the development of the microstructure in the SBT films. The 650°C annealed film exhibited the saturated hysteresis loop at 5 V and improved endurance behavior.

Key Words:

• low-temperature crystallization
• complex ethoxide
• calcination in a mixture of water vapor and oxygen
• microstructural development
• ferroelectric properties
• endurance behavior