Ferroelectric properties of (Pb_xLa_1−x)(Zr_yTi_1−y)O₃ films prepared by two-step pulsed laser deposition process

Hsiu-Fung Cheng Department of Physics, National Taiwan Normal University, Taipei, Taiwan, 117, R. O. C.

Kuo-Shung Liu Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan, 300, R. O. C.

Yu-Jen Chen Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan, 300, R. O. C.

Gwo Jamn Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan, 300, R. O. C.

I-Nan Lin Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, 300, R. O. C.

Abstract

A two-step pulsed laser deposition process has been successfully applied for growing the (Pb_xLa_1−x)(Zr_yTi_1−y) O₃, PLZT, thin films. These films exhibit good ferroelectric characteristics (P_r=18 μC/cm²; E _c=80 kV/cm; J _L≤0.2 μA/cm²), whenever crystalline SrRuO₃ materials were used as buffer layers. However, the electrical properties of PLZT films were markedly degraded whenever the amorphous SrRuO₃ or (La_0.5Sr_0.5)CoO₃ layer was used as buffer layer.

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Ferroelectric properties of (Pb_xLa_1−x)(Zr_yTi_1−y)O₃ films prepared by two-step pulsed laser deposition process

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Ferroelectric properties of (Pb_xLa_1−x)(Zr_yTi_1−y)O₃ films prepared by two-step pulsed laser deposition process