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Integrated Ferroelectrics
An International Journal
Volume 26, 1999 - Issue 1-4
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Section G: Materials processing – PVD

Process stability of ferroelectric PLZT thin film sputtering for FRAM® production

K. Suu Institute for Super Materials ULVAC Japan, Ltd., 523 Yokota, Sanbu, Chiba, 2891226, Japan
,
N. Tani Institute for Super Materials ULVAC Japan, Ltd., 523 Yokota, Sanbu, Chiba, 2891226, Japan
,
F. Chu Ramtron International Corp., 1850 Ramtron Drive, Colorado Springs, Colorado, 80921, USA
,
G. Hickert Ramtron International Corp., 1850 Ramtron Drive, Colorado Springs, Colorado, 80921, USA
,
T. D. Hadnagy Ramtron International Corp., 1850 Ramtron Drive, Colorado Springs, Colorado, 80921, USA
&
T. Davenport Ramtron International Corp., 1850 Ramtron Drive, Colorado Springs, Colorado, 80921, USA
Pages 9-19 | Received 07 Mar 1999, Published online: 19 Aug 2006
 
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Abstract

(PbLa)(Zr,Ti)O3 (PLZT) thin films were fabricated by RF magnetron sputtering. Aiming at process development for FRAM® production, PLZT films were deposited on 6-inch substrates using a 12-inch ceramic target. High deposition rate was realized at relatively low sputtering power by utilizing a high-density PLZT target. Precise compositional control was achieved by controlling sputtering condition. A non-stop 1000-wafer deposition was performed showing high process stability in terms of both deposition rate and ferroelectric properties.

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