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Integrated Ferroelectrics
An International Journal
Volume 26, 1999 - Issue 1-4
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Section G: Materials processing – PVD

Ferroelectric properties of PLZT thin films prepared using ULVAC ZX-1000 sputtering system

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Pages 47-55 | Received 07 Mar 1999, Published online: 19 Aug 2006
 

Abstract

Thin films of Ca and Sr doped PLZT(3/40/60) were RF sputtered on 6-inch substrates using ULVAC CERAUS ZX-1000 magnetron sputtering system. The 2000 Å PLZT films showed good thickness uniformity across the wafer (less than ± 1.5%). The crystallized PLZT films are highly {111} textured. The 3V QSW is above 30 μC/cm2 and V90% is below 3.5V. After 109 fatigue cycles, 3V Qsw is still 29 μC/cm2. The films also showed good retention properties. 3V Qss(10year) = 12 μC/cm2, 3V QOS(10year) = 9 μC/cm2. The same process was utilized to run 1000 wafers on ZX-1000. The stable ferroelectric performance achieved during 100 kWh sputtering indicates good repeatability of the ZX-1000 mass production tool.

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