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Abstract
MOCVD is an attractive technique for the deposition of ferroelectric thin films. In order to exploit the full potential of the technique, the properties of the metalorganic precursor sometimes need to be tailored in order to optimise process parameters. In this paper we describe how the substitution of simple alkoxide groups by β-diketonate or other chelating groups can lead to precursors with improved physical properties and optimised MOCVD performance.