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Integrated Ferroelectrics
An International Journal
Volume 26, 1999 - Issue 1-4
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Section I: Materials processing – chemical solution deposition

Crystallization behavior of alkoxy- derived SrBi2Ta2O9 thin films on Pt-passivated Si

Pages 243-251 | Received 07 Mar 1999, Published online: 19 Aug 2006
 

Abstract

Initiation of the crystallization of the triple-alkoxy-derived gel films to SrBi2Ta2O9 (SBT) perovskite thin films on Pt-passivated Si was addressed. The organic functional group of the triple alkoxide may determine the degree of the hydrolysis and poly-condensation reactions and affect the nucleation sites in the film after annealing. A mixture of water vapor and oxygen flow during the calcination at 250°C promoted the nucleation and growth of SBT below 500°C. It was clarified that the crystallographic orientaion of the SBT thin films has been determined in the primary stage of the crystallization.

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