Fabrication and characterization of MFISFET using CMOS process for single transistor memory application

Abstract

Metal Ferroelectric Insulator Semiconductor Fieid Effect Transistors (MFISFET) were fabricated using CMOS process. The PZT/TiO₂ combined layer was used as a gate dielectric layer of MFISFET device. The memory window of p type MFISFET was about 2.5 V. The threshold voltages of p-MFISFET and n-MFISFET are −1.8 V and 3.8 V, respectively. The Id-Vd characteristic shows a nonvolatile memory function through write and read operation. The retention property of p-MFISFET is examined by reading drain currents after writing to gate. About 15% reduction in the drain current is observed when it is read after 100 minutes.

Keywords:

• PZT
• TiO₂
• MFISFET
• Single transistor
• Ferroelectric