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Integrated Ferroelectrics
An International Journal
Volume 27, 1999 - Issue 1-4
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Section N: Circuits and devices

Retention performance of sbtn semiconductor memory products

, &
Pages 271-277 | Received 07 Mar 1999, Accepted 10 May 1999, Published online: 19 Aug 2006
 

Abstract

This study seeks to determine the feasibility and suitability of SBTN as a ferroelectric material used in the semiconductor wafer fabrication process. While Ramtron has years of experience producing PZT based parts, one vision for the future is that different materials may be required for different applications, depending on the specific product requirements. The family of bismuth layered perovskites may provide a path to low voltage applications, if the problems related to process integration and manufacturing that cause low bit count failures can be controlled. The design, manufacturing process and assembly are described, then a detailed evaluation is undertaken regarding retention performance.

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