Frequency-Dependent Admittance of Schottky Barriers at the Aluminium/Poly (3-Methylthiophene) Interface

Abstract

AC admittance measurements have been made from 10 Hz to 1 MHz so as to establish the conditions under which reasonable estimates of dopant density and diffusion potential may be made from C-V measurements. Cole-Cole plots are shown to provide a means of characterising devices in terms of the spread in their relaxation times. The effects of thermal annealing on device parameters are described.