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Abstract
Various elements - H, Li, B, Ar, Kr, Xe, Cs, Pb and Bi - have been implanted at 20 - 200 keV and at room temperature up to different fluences into thin fullerene layers evaporated onto polished Si substrates. Subsequently their depth profiles were determined by NRA, NDP, or RBS analysis. These measurements were compared with ion implantation into amorphous carbon and with theory. In most cases the degree of fullerene destruction was monitored by Raman spectroscopy earlier.
The results show that there exists a general trend insofar as theory appears to underestimate both ranges and range stragglings for heavy projectile ions, whereas for light and medium-heavy ions experimental range results agree with theory within some 30%. In a few cases range stragglings are found to be considerably larger than predicted by theory, which may be attributed to post-implantational radiation enhanced diffusion. There is only little influence of the degree of fullerene destruction onto the implantation profile parameters. Ranges in amorphous carbon appear to be in general a little bit larger than those ones in fullerene.
Notes
stopping powers as incorporated in the commercial TRIM code version TRIM 91.1 of J.F. Ziegler.