Positron annihilation study of the diffusion of oxygen in annealed silicon-doped gallium arsenide

A. C. Towner Physics Department, Royal Holloway, University of London, Egham, Surrey, TW20 0EX, UK

M. Nathwani Physics Department, Royal Holloway, University of London, Egham, Surrey, TW20 0EX, UK

A. S. Saleh Physics Department, Royal Holloway, University of London, Egham, Surrey, TW20 0EX, UK

D. P. van der Werf Physics Department, Royal Holloway, University of London, Egham, Surrey, TW20 0EX, UK

P. Rice-Evans Physics Department, Royal Holloway, University of London, Egham, Surrey, TW20 0EX, UK

Abstract

Positron annihilation spectroscopy has been applied to silicon-doped GaAs grown by molecular-beam epitaxy. Annealing SiO₂ capped samples at 930°C causes the Si_Ga—V_Ga vacancies to become positively charged. The SiO₂ caps cause oxygen to diffuse beneath the surface and the spectroscopy leads to the first measurement of the oxygen diffusion coefficient in GaAs. The application of a new analysis program ROYPROF reveals the creation of internal electric fields.

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Positron annihilation study of the diffusion of oxygen in annealed silicon-doped gallium arsenide

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Positron annihilation study of the diffusion of oxygen in annealed silicon-doped gallium arsenide

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