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Abstract
A Monte Carlo simulation procedure is employed to investigate the transport of charge carriers by hopping between localized point sites which are randomly situated in space. It is established that such a mechanism does not give rise to the anomalously dispersive characteristics predicted by the theory of Scher and Montroll. In contrast, a rapid approach to equilibrium occurs and conventional Gaussian broadening of an injected sheet of carriers is then observed. The results of the simulation are shown to be in good general agreement with the analysis recently advanced by Pollak.
An examination is made of the consequences of the above conclusions for the analysis of carrier transport processes in amorphous semiconductors.