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Philosophical Magazine B Volume 38, 1978 - Issue 2
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Correspondence

Electron and hole transport in amorphous As2Se3

R. A. Street Xerox Palo Alto Research Center, Palo Alto, California, 94304, U.S.A
Pages 191-195 | Received 06 Feb 1978, Accepted 14 Jun 1978, Published online: 01 Dec 2006
 
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Abstract

The model of charged defects is used to interpret transport experiments in As2Se3. An explanation is given for the observation of two activation energies in the hole mobility at different experimental time scales, and for the absence of electron transport.

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