Chemical bonding states in the amorphous Si_xC_1–x: H system studied by X-ray photoemission spectroscopy and infrared absorption spectra

Abstract

XPS studies and infrared absorption measurements of the reactively sputtered (RS) amorphous Si_xC_1–x: H alloy system have been made. The binding energy of the Si 2p core electrons decreases monotonically as the alloy composition x increases while the corresponding line-width remains almost constant. On the other hand, a curve of the C 1s core electron binding energy versus x has a kink at around x = 0·5∼0·6. Infrared absorption spectra reveal the existence of C–H, Si–H, Si–C bonds in the films. These results are discussed in terms of chemical bonding states.