Vacuum-ultraviolet generation of luminescence and absorption centres in a-Sio₂

J. H. Stathis Department of Physics and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, U.S.A.

M. A. Kastner Department of Physics and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, U.S.A.

Abstract

Irradiation by vacuum-ultraviolet photons has been shown to create an absorption band at 4·8 eV and a luminescence band at 1·9 eV in high-purity fused silica. The two processes are attributed to different centres since their growth curves are markedly different and their generation efficiencies depend in different ways on OH impurity content.

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Vacuum-ultraviolet generation of luminescence and absorption centres in a-Sio₂

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Vacuum-ultraviolet generation of luminescence and absorption centres in a-Sio₂