Level of dangling-bond centres in a-Si: H

I. Hirabayashi Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo, 106, Japan; Max-Planck-Institut fur Festkorperforschung, Heisenbergstrasse 1, D-7000, Stuttgart, F.R. Germany

K. Morigaki Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo, 106, Japan

Abstract

The depth of the negatively charged dangling-bond centres relative to the edge of the conduction band in a-Si: H has been estimated by photo-induced absorption (PA), PA-detected electron spin resonance and optically detected magnetic resonance measurements at 2K. Estimates of their depth range from 0.6 to 0.75 eV for various samples.

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Level of dangling-bond centres in a-Si: H

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Level of dangling-bond centres in a-Si: H

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