Abstract
A microscopic model based on charge-induced breaking of weak Si-Si bonds is proposed as an explanation for the experimentally observed increase of the dangling-bond density in a-Si: H upon illumination, charge injection, and doping. Energetic aspects of the conversion between weak and dangling bonds and implications for the electronic density of states of a-Si: H are described, and the relation of the model to negative4 defects in this material is discussed.